Periodical (Journal)

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ISSN  :   0741-3106 ( Print )   |   1558-0563 ( Online )   Active

Journal IEEE Electron Device Letters

Aim & Scope

IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. [1]

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Continuations / Journal History
(  N.A.  -  N.A.  ) Electron Device Letters (  1980  -  9999  ) IEEE Electron Device Letters
2024
298 RESULTS in 26 msec
2024-01-01

RF Characterization of Ferroelectric MOS Capacitors

A Persson , S Andrić , L Fhager , L Wernersson

IEEE Electron Device Letters , 2024 , p 1.

10.1109/led.2024.3428971

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2024-01-01

First Demonstration of Thermally Stable Zr:HfO2 Ferroelectrics Via Inserting AlN Interlayer

S Lee , G Kim , S Lee , ... , S Jeon

IEEE Electron Device Letters , 2024 , p 1.

10.1109/led.2024.3424973

0 0

2024-01-01

On the Understanding and Modeling of Non-Negligible Subthreshold-State Degradation (SSD) in Sub-20-nm DRAM Technology

D Wang , Y Xue , Y Liu , ... , R Huang

IEEE Electron Device Letters , 2024 , p 1.

10.1109/led.2024.3425860

0 0

2024-01-01

Study on Improving Efficiency of Perovskite Solar Cells through Controlling Humidity Conditions and Nickel Oxide Composition

W Han , Y Deng , W Liu , ... , W Guo

IEEE Electron Device Letters , 2024 , p 1.

10.1109/led.2024.3425671

0 0

2024-01-01

Crystal Filter-Mediated Grain Alignment in Poly-Si Thin-Film Transistors for Next-Generation Ferroelectric Memory Devices

I Kim , J Choi , J Lee

IEEE Electron Device Letters , 2024 , p 1.

10.1109/led.2024.3425454

0 0

2024-01-01

Direct visualization of optical polarization states based on van der Waals photodetector front-end and digital read-out modules

Y Huang , L Luo , Q Sun , ... , J Wu

IEEE Electron Device Letters , 2024 , p 1.

10.1109/led.2024.3425899

0 0

2024-01-01

Wide-range Threshold Voltage Tunable β-Ga2O3 FETs with a Sputtered AlScN Ferroelectric Gate Dielectric

S Oh , S Kim , G Lee , ... , G Yoo

IEEE Electron Device Letters , 2024 , p 1.

10.1109/led.2024.3425439

0 0

2024-01-01

Concept of Dual-Frequency Double-Beam Gyrotron for Plasma Applications

I Zheleznov , V Zaslavsky , I Zotova , ... , M Glyavin

IEEE Electron Device Letters , 2024 , p 1.

10.1109/led.2024.3424652

0 0

2024-01-01

One-Transistor One-Memristor based Universal Oscillating Units for Spike-Encoding Artificial Sensory Neuron

L Qiao , S Ke , K Shi , ... , C Wan

IEEE Electron Device Letters , 2024 , p 1.

10.1109/led.2024.3424516

0 0

2024-01-01

Flexible 2D Perovskite Film for Dual-Mode X-Ray Detection and Imaging

F Liao , L Lei , X Gan , ... , G Yao

IEEE Electron Device Letters , 2024 , p 1.

10.1109/led.2024.3424470

0 0

 

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