Aim & Scope
The aim of Microelectronic Engineering is to bring together in one publication the results of European, American and Japanese work in the rapidly expanding field of integrated microelectronic, optic and optoelectronic devices. Microelectronic Engineering is an archival, peer-reviewed journal. It publishes full research papers, short communications, and review articles. The scope of this Journal includes materials, methods and designs for microfabrication, processing and inspection for microelectronic and optoelectronic elements from centimeters to nanometers.The wide range of topics covered by the journal include:1. Lithographyoptical lithography (submicron dimensions, deep u.v. lithography)electron optical methods and systemsX-ray optical methods and systemsresistslimits2. Pattern Transferion technologyplasma etchingself-organisation3. Materialsmetallization and barrier materialsmicrostructuring growth processessilicon on insulatorscompound semiconductorsdielectrics (low K and high K)interconnect architectures4. Inspection and Testingelectron beam testerslaser probessignal and image processingmetrology5. Advanced Processingprocess integrationthree dimensional integrationdefect free processesmanufacturing sciencerapid thermal processingprocess modellingequipment modellinglaser assisted processing6. Micromechanical Structuresfabricationdesign7. Advanced Devicesnanometer structuresdimension-sensitive device propertieseffect of scaling LDSD 99 - The Third International Conference on Low Dimensional Structures and Devices LDSD 99 - The Third International Conference on Low Dimensional Structures and Devices will take place 15-17 September 1999 in Antalya, Turkey. For full details see the conference website or contact Sue Stewart, e-mail: [email protected] at the conference secretariat. [1]
2024
Ta/Al/CuW low temperature ohmic contacts for GaN-on-Si HEMT
No authors listed.
Microelectronic Engineering , 2024 , p 112132.
Engineering TiOx interlayers in high vacuum for Al-contacted MoSe2 transistors
No authors listed.
Microelectronic Engineering , 2024 , p 112139.
Al3Sc thin films for advanced interconnect applications
No authors listed.
Microelectronic Engineering , 2024 , p 112141.
High bias stability of Hf-doping-modulated indium oxide thin-film transistors
No authors listed.
Microelectronic Engineering , 2024 , p 112142.
A ScAlN-based piezoelectric breathing mode dual-ring resonator with high temperature stability
No authors listed.
Microelectronic Engineering , 2024 , p 112144.
A new characterization model of FinFET self-heating effect based on FinFET characteristic parameter
No authors listed.
Microelectronic Engineering , 2024 , p 112155.
Editorial Retractions, Expressions of Concern and External Notices
Nanopatterning of colloidal nanocrystals emitters dispersed in a PMMA matrix by e-beam lithography
L Martiradonna , T Stomeo , M Giorgi , ... , M Vittorio
Microelectronic Engineering2006 - VOLUME 83, ISSUES 4-9 pp 1478-1481.
3 15
Growth of InGaAs/InP quantum well structures by low-pressure metalorganic chemical vapor deposition
V McCrary , J Lee , S Chu , ... , J Zilko
Microelectronic Engineering1992 - VOLUME 18, ISSUES 1-2 pp 75-88.
0 8