Aim & Scope
Materials Science in Semiconductor Processing provides a unique and much needed forum for the discussion of experimental and theoretical materials research stimulated by and applied to semiconductor processing. Each issue will aim to provide a snapshot of current comprehension, new achievements, breakthroughs and future trends in such fields as ion implantation, diffusion and gettering, process and equipment modelling, metallization and interconnects, packaging, etc, which are the backbone of semiconductor device processing. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation for dopant engineering; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; ultra low energy implantation: physics, limitations and perspectives; gettering procedures for ULSI; advanced metallization and interconnects schemes; thin dielectric layer, oxidation; cleaning procedures for ULSI devices; compound semiconductor processing; physical modelling of processing (ion implantation, metal deposition, oxidation, etching, etc.): molecular dynamics, ab-initio methods, Monte Carlo, etc.; new physical models in commercial simulation platforms for the design and modelling of advanced devices; equipment modelling; new materials and processes for discrete and integrated circuits; heterostructures and quantum devices; engineering of the electrical and optical the properties of semiconductors; crystal growth: mechanisms, reliability, defect density intrinsic impurities and defects. [1]
Continuations / Journal History
| ( 1960 - 9999 ) | Solid-State Electronics | ( 1998 - 9999 ) | Materials Science in Semiconductor Processing |
2024
Obituary - Dr. Fuccio Cristiano
A Alberti , B Colombeau , A La Magna , ... , P Pichler
Materials Science in Semiconductor Processing , 2024 , p 108270.
B Oni , S Sanni , O Tomomewo , S Bade
Materials Science in Semiconductor Processing , 2024 , p 108313.
Editorial Retractions, Expressions of Concern and External Notices
A Alsalme , N Mohammed , M Fahmy , ... , M Ahmed
Materials Science in Semiconductor Processing2024 - VOLUME 176 p 108329.
1 51
RETRACTED: Oxygen vacancy induced high specific capacitance in Sr2CoSbO6
M Ramesh , V Viswanath N , J Yesuraj , ... , K Biswas
Materials Science in Semiconductor Processing2022 - VOLUME 148 p 106806.
2 45
M Ramesh , N Vyshakh Viswanath , J Yesuraj , ... , K Biswas
Materials Science in Semiconductor Processing
2024 - VOLUME 173
0 1
PubPeer
2024 - VOLUME 2024, ISSUE 1
0 0
A Rose , N Raghavan , S Thangavel , ... , G Venugopal
Materials Science in Semiconductor Processing2015 - VOLUME 31 pp 281-286.
4 26
I Benjamin , B Ekpong , H Abdullah , ... , H Louis
Materials Science in Semiconductor Processing2024 - VOLUME 174 p 108245.
0 68
A Khudiar , M Zulfequar , Z Khan
Materials Science in Semiconductor Processing2012 - VOLUME 15, ISSUE 5 pp 536-542.
3 25
MoS2-doped spherical SnO2 for SO2 sensing under UV light at room temperature
X He , Z Ying , F Wen , ... , G Wang
Materials Science in Semiconductor Processing2021 - VOLUME 134 p 105997.
4 49
R Ismail , K Hassan , O Abdulrazaq , W Abode
Materials Science in Semiconductor Processing2007 - VOLUME 10, ISSUE 1 pp 19-23.
9 11